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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CHM9435AZPT CURRENT 5.3 Ampere FEATURE * Small flat package. ( SC-73/SOT-223 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. 6.50+0.20 3.00+0.10 SC-73/SOT-223 1.65+0.15 0.90+0.05 2.0+0.3 CONSTRUCTION * P-Channel Enhancement 0.70+0.10 0.70+0.10 2.30+0.1 3.5+0.2 7.0+0.3 0.9+0.2 2.0+0.3 0.70+0.10 4.60+0.1 0.27+0.05 0.01~0.10 1 1 Gate 3 2 CIRCUIT 1G 3 D 2 Source 3 Drain ( Heat Sink ) 2S Dimensions in millimeters SC-73/SOT-223 Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted CHM9435AZPT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous -30 V V 20 -5.3 ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range (Note 3) A -20 2500 -55 to 150 -55 to 150 mW C C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 50 C/W 2005-02 RATING CHARACTERISTIC CURVES ( CHM9435AZPT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = -250 A VDS = -24 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V -30 -1 +100 -100 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) g FS Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = -250 A VGS=-10V, ID=-5.3A VGS=-4.5V, ID=-4.2A -1 -3 60 V m 120 4 8.3 S Forward Transconductance VDS = -15V, ID = -5.3A SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q tr toff tf gd Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=-15V, ID=-5.3A VGS=-10V V DD= -15V ID = -1.0A , VGS = -10 V RGEN= 6 22.5 2.0 6.0 9.0 16 75 40 29 nC ton 30 60 120 100 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode Forward Current (Note 1) -1.9 -1.3 A V Drain-Source Diode Forward Voltage IS = -5.3A , VGS = 0 V (Note 2) RATING CHARACTERISTIC CURVES ( CHM9435AZPT ) Typical Electrical Characteristics Figure 1. Output Characteristics 25 Figure 2. Transfer Characteristics 20 V G S =- 1 0 V I D , DRAIN CURRENT (A) -9.0V -8.0V -7.0V I D , DRAIN CURRENT (A) 20 VG S =- 6 . 0 V 16 15 TJ=-55C 12 10 VG S =- 5 . 0 V VG S =- 4 . 0 V VG S =- 3 . 0 V 0 0.5 2.0 2.5 1.0 1.5 V DS , DRAIN-TO-SOURCE VOLTAGE (V) 3.0 8 5 4 TJ=125C 0 0 0.5 TJ=25C 2.5 3.0 0 2.0 1.0 1.5 VGS , GATE-TO-SOURCE VOLTAGE (V) Figure 3. Gate Charge 10 2.2 VDS=-15V ID=-5.3A 8 Figure 4. On-Resistance Variation with Temperature VGS=-10V ID=-5.3A VGS , GATE TO SOURCE VOLTAGE (V) DRAIN-SOURCE ON-RESISTANCE 1.9 R DS(on) , NO RMALIZED 1.6 6 1.3 4 1.0 2 0.7 0 0 4 8 12 16 Qg , TOTAL GATE CHARGE (nC) 20 24 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (C) 150 200 Figure 5. Gate Threshold Variation with Temperature 1.3 1.2 VDS=VGS ID=250uA Vth , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (C) 125 150 |
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